Broadband 1 x 4 Silicon Nitride Photonic Switch Fabricated on a Hybrid Electrothermal and Electrostatic MEMS Platform

This study demonstrates a monolithic 1 x 4 optical switch composed of planar micro-electro-mechanical system (MEMS) integrated with silicon nitride (SiN) waveguides. The switching motion is induced by an optimized cascaded chevron electrothermal actuator, which produces analog, precise, and large stroke for low voltages. Nanoscale displacement measurements show repeatability on the order 10 nm total ∼12 μm about V. To reduce insertion losses, parallel plate electrostatic actuator closes gap between waveguides after motion. transmission, measured devices, roughly same across entire 1520-1620 wavelength range. average losses are 4.0 ± 1.9, 4.4 2.0, 4.9 4.1 1.2 dB ports to respectively, while crosstalk smaller than -35 dB. relatively compact (< mm 2 ), considering its displacement, built silicon-on-insulator wafer customized fabrication process flow developed AEPONYX Inc. We believe that this device can lead way new class small robust MEMS photonic devices able operate over wide span provide tuning range Future work will focus reducing achieving near zero power consumption addition mechanical latches.